A2G35S200-01SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$185.62
Available to order
Reference Price (USD)
250+
$123.43584
Exquisite packaging
Discount
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The A2G35S200-01SR3 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The A2G35S200-01SR3's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the A2G35S200-01SR3 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 3.4GHz ~ 3.6GHz
- Gain: 16.1dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 291 mA
- Power - Output: 180W
- Voltage - Rated: 125 V
- Package / Case: NI-400S-2S
- Supplier Device Package: NI-400S-2S
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