A2I25H060NR1
NXP USA Inc.
NXP USA Inc.
IC RF LDMOS AMP
$0.00
Available to order
Reference Price (USD)
500+
$60.10998
Exquisite packaging
Discount
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Designed for superior RF performance, the A2I25H060NR1 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The A2I25H060NR1 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the A2I25H060NR1 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.59GHz
- Gain: 26.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 26 mA
- Power - Output: 10.5W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
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