A2T07D160W04SR3128
NXP USA Inc.
NXP USA Inc.
RF POWER LDMOS TRANSISTOR
$78.25
Available to order
Reference Price (USD)
1+
$78.25000
500+
$77.4675
1000+
$76.685
1500+
$75.9025
2000+
$75.12
2500+
$74.3375
Exquisite packaging
Discount
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The A2T07D160W04SR3128 by NXP USA Inc. is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the A2T07D160W04SR3128 ensures efficient and stable operation. Backed by NXP USA Inc.'s reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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