A2T18H455W23NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
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Reference Price (USD)
150+
$138.73600
Exquisite packaging
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The A2T18H455W23NR6 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the A2T18H455W23NR6 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14.5dB
- Voltage - Test: 31.5 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.08 A
- Power - Output: 56dBm
- Voltage - Rated: 65 V
- Package / Case: OM-1230-4L2S
- Supplier Device Package: OM-1230-4L2S
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