A2T18S162W31GSR3
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
250+
$102.34604
Exquisite packaging
Discount
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Engineered for excellence, the A2T18S162W31GSR3 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The A2T18S162W31GSR3's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s A2T18S162W31GSR3 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.84GHz
- Gain: 20.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-780GS-2L2LA
- Supplier Device Package: NI-780GS-2L2LA
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