A2T18S261W12NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$0.00
Available to order
Reference Price (USD)
250+
$67.67544
Exquisite packaging
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The A2T18S261W12NR3 RF MOSFET transistor by NXP USA Inc. is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The A2T18S261W12NR3 stands out for its ability to handle high power levels while maintaining signal integrity. When you choose NXP USA Inc.'s A2T18S261W12NR3, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 18.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.5 A
- Power - Output: 280W
- Voltage - Rated: 65 V
- Package / Case: OM-880X-2L2L
- Supplier Device Package: OM-880X-2L2L
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