A2V07H400-04NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$171.83
Available to order
Reference Price (USD)
250+
$104.10576
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The A2V07H400-04NR3 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The A2V07H400-04NR3's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the A2V07H400-04NR3 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 595MHz ~ 851MHz
- Gain: 19.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 267W
- Voltage - Rated: 105 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
Related Products
onsemi
SCH2819-TL-H
onsemi
STMFS4855NST1G
onsemi
2SK3487-TD-E
Freescale Semiconductor
MRF8P20160HSR3
NXP USA Inc.
MMRF1008GHR5
NXP USA Inc.
A2T18S166W12SR3
onsemi
2SK1740-5-TB-E-ON
Ampleon USA Inc.
BLC10G22XS-570AVTZ
Ampleon USA Inc.
BLC10G22XS-602AVTZ
onsemi