A2V07H525-04NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$179.81
Available to order
Reference Price (USD)
150+
$136.64047
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the A2V07H525-04NR6 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The A2V07H525-04NR6's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the A2V07H525-04NR6 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 595MHz ~ 851MHz
- Gain: 17.5dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 120W
- Voltage - Rated: 105 V
- Package / Case: OM-1230-4L
- Supplier Device Package: OM-1230-4L
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