A3G26D055N-100
NXP USA Inc.
NXP USA Inc.
RF REF CIRCUIT 25W 100-2800MHZ
$675.00
Available to order
Reference Price (USD)
1+
$675.00000
500+
$668.25
1000+
$661.5
1500+
$654.75
2000+
$648
2500+
$641.25
Exquisite packaging
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The A3G26D055N-100 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The A3G26D055N-100's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the A3G26D055N-100 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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