A3I35D025GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
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Meet the A3I35D025GNR1, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The A3I35D025GNR1 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the A3I35D025GNR1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 3.2GHz ~ 4GHz
- Gain: 27.8dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 3.4W
- Voltage - Rated: 28 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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