A3T18H360W23SR6
NXP USA Inc.
NXP USA Inc.
1.8GHZ 360W ACP1230S-4L2
$153.52
Available to order
Reference Price (USD)
150+
$94.90413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the A3T18H360W23SR6, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The A3T18H360W23SR6 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the A3T18H360W23SR6 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1.8GHz ~ 1.88GHz
- Gain: 16.6dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
Related Products
NXP USA Inc.
A2T09D400-23NR6
onsemi
2SK3850-TL-E
Ampleon USA Inc.
BLC10G18XS-600AVTZ
Ampleon USA Inc.
BLM9D2327S-50PBGY
onsemi
2SK242-5-TB-E
Wolfspeed, Inc.
CG2H80045D-GP4
Wolfspeed, Inc.
PXAC261002FC-V1-R250
onsemi
2SJ637-S-TL-E
onsemi
ECH8606-TL-H
NXP USA Inc.