A3T21H360W23SR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$140.00
Available to order
Reference Price (USD)
150+
$96.71760
Exquisite packaging
Discount
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The A3T21H360W23SR6 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the A3T21H360W23SR6 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s A3T21H360W23SR6 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 16.4dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 328W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
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