A5G35H110N-3400
NXP USA Inc.
NXP USA Inc.
A5G35H110N 3400-3600 MHZ REFEREN
$492.19
Available to order
Reference Price (USD)
1+
$492.19000
500+
$487.2681
1000+
$482.3462
1500+
$477.4243
2000+
$472.5024
2500+
$467.5805
Exquisite packaging
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The A5G35H110N-3400 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The A5G35H110N-3400's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the A5G35H110N-3400 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 3.3GHz ~ 3.7GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 15.1W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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