AFGHL40T120RH
onsemi
onsemi
1200V/40A FSII IGBT (NO FRD) TO2
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Upgrade your power management systems with the AFGHL40T120RH Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the AFGHL40T120RH provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose AFGHL40T120RH for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 400 W
- Switching Energy: 3.7mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 277 nC
- Td (on/off) @ 25°C: 37ns/150ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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