AFGHL50T65SQDC
onsemi
onsemi
IGBT 650V A
$11.35
Available to order
Reference Price (USD)
1+
$11.35000
500+
$11.2365
1000+
$11.123
1500+
$11.0095
2000+
$10.896
2500+
$10.7825
Exquisite packaging
Discount
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Discover the AFGHL50T65SQDC Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the AFGHL50T65SQDC ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the AFGHL50T65SQDC for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 238 W
- Switching Energy: 131µJ (on), 96µJ (off)
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 17.6ns/94.4ns
- Test Condition: 400V, 12.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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