AFT05MS006NT1
NXP USA Inc.
NXP USA Inc.
FET RF 30V 520MHZ PLD
$4.91
Available to order
Reference Price (USD)
1,000+
$1.95132
2,000+
$1.85376
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the AFT05MS006NT1 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The AFT05MS006NT1's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the AFT05MS006NT1 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Not For New Designs
- Transistor Type: LDMOS
- Frequency: 520MHz
- Gain: 18.3dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 6W
- Voltage - Rated: 30 V
- Package / Case: PLD-1.5W
- Supplier Device Package: PLD-1.5W
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