AFT09S200W02GNR3
NXP USA Inc.
NXP USA Inc.
FET RF 70V 960MHZ PLD
$0.00
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Reference Price (USD)
250+
$86.57568
Exquisite packaging
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Meet the AFT09S200W02GNR3, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The AFT09S200W02GNR3 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the AFT09S200W02GNR3 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 56W
- Voltage - Rated: 70 V
- Package / Case: OM-780-2G
- Supplier Device Package: OM-780-2 Gull
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