AFT20P060-4GNR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.17GHZ OM780-4GW
$0.00
Available to order
Reference Price (USD)
250+
$30.34444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the AFT20P060-4GNR3 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The AFT20P060-4GNR3's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s AFT20P060-4GNR3 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.17GHz
- Gain: 18.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 450 mA
- Power - Output: 6.3W
- Voltage - Rated: 65 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
Related Products
Ampleon USA Inc.
BLF879PSIN
NXP USA Inc.
BLF6G27LS-50BN,118
Ampleon USA Inc.
BLF8G22LS-200
CEL
NE350184C
MACOM Technology Solutions
NPT2021
NXP USA Inc.
BLF4G20LS-110B,112
NXP USA Inc.
BLP7G22-10,135
NXP USA Inc.
BLC6G22LS-75,112
Infineon Technologies
PTFB193408SVV1R250XTMA1
NXP USA Inc.