AFT26H200W03SR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.5GHZ NI1230S-4
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Reference Price (USD)
150+
$118.86860
Exquisite packaging
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The AFT26H200W03SR6 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the AFT26H200W03SR6 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s AFT26H200W03SR6 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.5GHz
- Gain: 14.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 45W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S
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