AIHD15N60RATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$1.27774
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the AIHD15N60RATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the AIHD15N60RATMA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose AIHD15N60RATMA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 250 W
- Switching Energy: 370µJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 16ns/183ns
- Test Condition: 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
Related Products
Infineon Technologies
SIGC42T60SNCX1SA2
Fairchild Semiconductor
FGH30N120FTDTU
Infineon Technologies
IRGP20B120U-EP
IXYS
IXSA10N60B2D1
IXYS
IXGA150N30TC
SemiQ
GPA042A100L-ND
IXYS
IXGT60N60B2
Infineon Technologies
IRGP4650DPBF
Infineon Technologies
IRG7PH35UPBF
Infineon Technologies