AIMW120R035M1HXKSA1
Infineon Technologies
Infineon Technologies
1200V COOLSIC MOSFET PG-TO247-3
$24.22
Available to order
Reference Price (USD)
1+
$24.22000
500+
$23.9778
1000+
$23.7356
1500+
$23.4934
2000+
$23.2512
2500+
$23.009
Exquisite packaging
Discount
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The AIMW120R035M1HXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the AIMW120R035M1HXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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