AIMW120R045M1XKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1200V 52A TO247-3
$24.04
Available to order
Reference Price (USD)
1+
$24.04000
500+
$23.7996
1000+
$23.5592
1500+
$23.3188
2000+
$23.0784
2500+
$22.838
Exquisite packaging
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The AIMW120R045M1XKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the AIMW120R045M1XKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): +20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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