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AOW418

Alpha & Omega Semiconductor Inc.
AOW418 Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 9.5A/105A TO262
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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