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AOWF11S65

Alpha & Omega Semiconductor Inc.
AOWF11S65 Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 11A TO262F
$1.36
Available to order
Reference Price (USD)
1,000+
$1.21040
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262F
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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