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APT106N60B2C6

Microchip Technology
APT106N60B2C6 Preview
Microchip Technology
MOSFET N-CH 600V 106A T-MAX
$17.22
Available to order
Reference Price (USD)
1+
$17.62000
10+
$16.01400
100+
$13.61190
500+
$11.61016
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant

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