APT11N80BC3G
Microchip Technology
Microchip Technology
MOSFET N-CH 800V 11A TO247
$4.64
Available to order
Reference Price (USD)
1+
$6.05000
10+
$5.40600
100+
$4.43290
500+
$3.58958
1,000+
$3.02736
Exquisite packaging
Discount
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Meet the APT11N80BC3G by Microchip Technology, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The APT11N80BC3G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Microchip Technology.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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