APT13003EU-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 465V 1.5A TO126
$0.00
Available to order
Reference Price (USD)
1+
$0.42000
10+
$0.34300
100+
$0.23360
500+
$0.17520
1,000+
$0.13140
Exquisite packaging
Discount
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Upgrade your electronic designs with the APT13003EU-G1 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the APT13003EU-G1 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 465 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
- Power - Max: 20 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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