APT13003LZTR-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 0.8A TO92
$0.00
Available to order
Reference Price (USD)
2,000+
$0.07040
Exquisite packaging
Discount
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Discover the APT13003LZTR-G1 Bipolar Junction Transistor (BJT) from Diodes Incorporated, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the APT13003LZTR-G1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Diodes Incorporated for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 300mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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