APT13005DT-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 4A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$0.93000
10+
$0.81900
100+
$0.63880
500+
$0.51480
1,000+
$0.42120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APT13005DT-G1 Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the APT13005DT-G1 provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 75 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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