APT25GF120JCU2
Microsemi Corporation
Microsemi Corporation
IGBT MOD 1200V 45A 227W SOT227
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Microsemi Corporation's APT25GF120JCU2 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the APT25GF120JCU2 enables higher power density in MRI gradient amplifiers. Choose Microsemi Corporation for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 45 A
- Power - Max: 227 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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