APT30GN60BDQ2G
Microchip Technology
Microchip Technology
IGBT 600V 63A 203W TO247
$4.58
Available to order
Reference Price (USD)
112+
$4.91804
Exquisite packaging
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Optimize your power systems with the APT30GN60BDQ2G Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the APT30GN60BDQ2G delivers consistent and reliable operation. Trust Microchip Technology's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 63 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 203 W
- Switching Energy: 525µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 12ns/155ns
- Test Condition: 400V, 30A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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