APT30GS60BRDLG
Microsemi Corporation
Microsemi Corporation
IGBT 600V 54A 250W TO247
$0.00
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Reference Price (USD)
72+
$7.64056
Exquisite packaging
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Discover the APT30GS60BRDLG Single IGBT transistor by Microsemi Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the APT30GS60BRDLG ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the APT30GS60BRDLG for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 113 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 570µJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 16ns/360ns
- Test Condition: 400V, 30A, 9.1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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