APT35GP120B2D2G
Microchip Technology
Microchip Technology
IGBT PT COMBI 1200V 35A TO-247
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The APT35GP120B2D2G Single IGBT transistor by Microchip Technology is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The APT35GP120B2D2G ensures precise power control and long-term stability. With Microchip Technology's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate APT35GP120B2D2G into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
- Power - Max: 540 W
- Switching Energy: 1mJ (on), 1.185mJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 14ns, 99ns
- Test Condition: 800V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: T-MAX™ [B2]
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