APT36N90BC3G
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 900V 36A TO247
$21.06
Available to order
Reference Price (USD)
1+
$22.26000
10+
$20.58700
100+
$17.58260
500+
$15.57948
Exquisite packaging
Discount
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Enhance your electronic projects with the APT36N90BC3G single MOSFET from Microsemi Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Microsemi Corporation's APT36N90BC3G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7463 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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