APT40GR120B2SCD10
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 88A 500W TO247
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Upgrade your power management systems with the APT40GR120B2SCD10 Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the APT40GR120B2SCD10 provides reliable and efficient operation. Microsemi Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose APT40GR120B2SCD10 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 88 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
- Power - Max: 500 W
- Switching Energy: 929µJ (on), 1070µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 20ns/166ns
- Test Condition: 600V, 40A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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