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APT40SM120S

Microsemi Corporation
APT40SM120S Preview
Microsemi Corporation
SICFET N-CH 1200V 41A D3PAK
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
  • FET Feature: -
  • Power Dissipation (Max): 273W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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