APT44GA60BD30C
Microsemi Corporation
Microsemi Corporation
IGBT 600V 78A 337W TO247
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Optimize your power systems with the APT44GA60BD30C Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the APT44GA60BD30C delivers consistent and reliable operation. Trust Microsemi Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 130 A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
- Power - Max: 337 W
- Switching Energy: 409µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 128 nC
- Td (on/off) @ 25°C: 16ns/102ns
- Test Condition: 400V, 26A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 [B]
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