Shopping cart

Subtotal: $0.00

APT6017B2LLG

Microsemi Corporation
APT6017B2LLG Preview
Microsemi Corporation
MOSFET N-CH 600V 35A T-MAX
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant

Related Products

Infineon Technologies

IRLR8259PBF

Infineon Technologies

SPP70N10L

Vishay Siliconix

SUP90N15-18P-E3

Infineon Technologies

IRF1010NSTRR

Infineon Technologies

BUZ31L E3044A

Vishay Siliconix

IRFSL9N60ATRR

Infineon Technologies

IRF3704ZCSTRRP

Top