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APT95GR65JDU60

Microsemi Corporation
APT95GR65JDU60 Preview
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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Specifications

  • Product Status: Obsolete
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 135 A
  • Current - Collector Pulsed (Icm): 380 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
  • Power - Max: 446 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 420 nC
  • Td (on/off) @ 25°C: 29ns/226ns
  • Test Condition: 433V, 95A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227

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