APTC80H29T1G
Microsemi Corporation
Microsemi Corporation
MOSFET 4N-CH 800V 15A SP1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTC80H29T1G by Microsemi Corporation is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the APTC80H29T1G offers superior functionality and longevity. Trust Microsemi Corporation to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
- Power - Max: 156W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
Related Products
IXYS
GWM120-0075X1-SLSAM
IXYS
GWM220-004P3-SL
Fairchild Semiconductor
SI4953DY
onsemi
EFC6617R-TF
onsemi
VEC2616-TL-H-Z-W
Fairchild Semiconductor
FDD6N50RTF
IXYS
GMM3X100-01X1-SMDSAM
Sanyo
2SK2631-E
Alpha & Omega Semiconductor Inc.
AO5600EL
Infineon Technologies