APTC90DAM60CT1G
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 900V 59A SP1
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Meet the APTC90DAM60CT1G by Microsemi Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The APTC90DAM60CT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Microsemi Corporation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 462W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
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