APTC90H12T2G
Microsemi Corporation
Microsemi Corporation
MOSFET 4N-CH 900V 30A SP2
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Enhance your circuit designs with the APTC90H12T2G, a premium Transistors - FETs, MOSFETs - Arrays product from Microsemi Corporation. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the APTC90H12T2G delivers consistent and reliable operation. Microsemi Corporation's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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