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APTC90HM60T3G

Microsemi Corporation
APTC90HM60T3G Preview
Microsemi Corporation
MOSFET 4N-CH 900V 59A SP3
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Specifications

  • Product Status: Obsolete
  • FET Type: 4 N-Channel (Half Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3

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