APTGF200U120DG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 275A 1136W SP6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Microsemi Corporation's APTGF200U120DG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The APTGF200U120DG is particularly effective in high-ambient-temperature environments like steel mill drives. Microsemi Corporation brings decades of semiconductor expertise to every APTGF200U120DG module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 275 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 13.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
Related Products
Powerex Inc.
CM150DY-34A
Littelfuse Inc.
MG12150S-DEN2MM
Infineon Technologies
FF300R06KE3_B2
Infineon Technologies
FS100R12KT4GPBPSA1
Microsemi Corporation
APTGT100DA170TG
Vishay General Semiconductor - Diodes Division
GB35XF120K
Microsemi Corporation
APTGT150DA170G
IXYS
VII75-06P1
Microsemi Corporation
APTGT150A170G
Vishay General Semiconductor - Diodes Division