APTGF25DSK120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 208W SP3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTGF25DSK120T3G from Microsemi Corporation exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the APTGF25DSK120T3G in megawatt-level wind turbine converters. With Microsemi Corporation's proven track record, the APTGF25DSK120T3G represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Dual Buck Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
Infineon Technologies
IRG5K30FF06Z
Vishay General Semiconductor - Diodes Division
VS-25MT060WFAPBF
onsemi
FMS7G10US60
Powerex Inc.
CM200HA-24H
Infineon Technologies
IRG5K200HF06B
Microchip Technology
APTGF90A60TG
Microsemi Corporation
APTGF25DDA120T3G
Infineon Technologies
IRG5U100HF12A
IXYS
MDI400-12E4
Infineon Technologies