APTGFQ25H120T2G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 227W SP2
$0.00
Available to order
Reference Price (USD)
1+
$59.44000
10+
$55.94500
25+
$52.44840
Exquisite packaging
Discount
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The APTGFQ25H120T2G by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGFQ25H120T2G in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGFQ25H120T2G module.
Specifications
- Product Status: Active
- IGBT Type: NPT and Fieldstop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 227 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.02 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: SP2
- Supplier Device Package: SP2
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