APTGT100DH170G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 150A 560W SP6
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Microsemi Corporation's APTGT100DH170G sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the APTGT100DH170G in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microsemi Corporation to deliver cutting-edge IGBT solutions with the APTGT100DH170G power module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 560 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
- Current - Collector Cutoff (Max): 350 µA
- Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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