APTGT50DA170T1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 75A 312W SP1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTGT50DA170T1G by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGT50DA170T1G in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGT50DA170T1G module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 312 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
Related Products
Microsemi Corporation
APTGT75DSK60T3G
Powerex Inc.
CM150E3U-24H
Powerex Inc.
CM150DU-12H
Powerex Inc.
CM600HA-12H
Microsemi Corporation
APTGT30TL60T3G
Microsemi Corporation
APTGT75DH60T1G
Microchip Technology
APTGF300SK120G
Microsemi Corporation
APTGT580U60D4G
IXYS
MUBW15-12T7
IXYS