APTGT50DH120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 277W SP3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTGT50DH120T3G by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGT50DH120T3G in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGT50DH120T3G module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 277 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
Microchip Technology
CMSDDF40H60T1G
Powerex Inc.
CM75DY-24H
IXYS
MKI100-12E8
Vishay General Semiconductor - Diodes Division
VS-GB300TH120N
Infineon Technologies
IRG7T150CL12B
IXYS
MWI150-06A8
Infineon Technologies
FD600R17KE3KB5NOSA1
Infineon Technologies
IRG7T75HF12A
Powerex Inc.
CM50TF-12H
Infineon Technologies