Shopping cart

Subtotal: $0.00

APTM100DU18TG

Microsemi Corporation
APTM100DU18TG Preview
Microsemi Corporation
MOSFET 2N-CH 1000V 43A SP4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 43A
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4

Related Products

Powerex Inc.

QJD1210SA2

Infineon Technologies

FF1MR12KM1HP

Renesas Electronics America Inc

2SK1284-Z-E1-AZ

Central Semiconductor Corp

CTLDM303N-M832DS BK

Harris Corporation

RFD14N05S2515

Renesas Electronics America Inc

UPA2351T1P-E4-A

Rohm Semiconductor

SP8K33TB1

Fairchild Semiconductor

2SJ633-E

Top